Field Effect, now in 2D!

Despite his age, Dr. Mario Lanza has a long experience and deep knowledge on the physics and development of micro and nanoelectronic devices. In this recent article he an his coworkers discuss “the main challenges and potential solutions towards the fabrication of field effect transistors with 2D semiconducting channels”. In particular, there is a useful analysis on how this technology, now dealing with sizes that approach the interatomic distances, could be implemented in the current semiconductor industry.

This picture we did for him was featured on the cover of Advanced Functional Materials.

On Piezoelectric Layered Materials

A new addition to the nanoscopic world: the piezoelectric effect. Prof. M. Lanza et al. have studied the ability of layered MoS2 to produce electric currents under the pressure of a conductive atomic force microscope. This would allow the fabrication of self-powered devices.

This research has been published in Nanoscale Journal and its been awarded with the front cover.

China RRAM

The China RRAM International Workshop launches its first edition on June 12th-14th of 2017 at Soochow University. Resistive Random Access Memories and related applications will be discussed in this workshop.

They asked us to make a picture for the workshop website and this is what we came up with, with the help of Prof. Mario Lanza and Marco A. Villena.

Scixel goes to China

Dr. Lanza’s research activity is somewhat beyond understanding. At least beyond our understanding. Here is a good example: his new book on Conductive Atomic Force Microscopy, where he, together with leading researchers, provides a global perspective on the subject and covers novel strategies, configurations and setups where new information will be obtained with the help of CAFM.